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Summary:¹ The top cited patents in micro-structural and nano-technology, as indicated by the citations received from other patents granted in 2022, reveal several key themes:
Advanced Transistor Technologies: A significant focus is on the development of advanced transistor technologies, such as FinFETs, Gate-All-Around (GAA) transistors, and nanosheet transistors. These technologies enable smaller, faster, and more energy-efficient devices.
Nanofabrication Techniques: Patents related to nanofabrication techniques, such as lithography, etching, and deposition, are essential for creating nanoscale devices and structures.
Material Science: The development of new materials, such as high-k dielectrics and advanced metal gate materials, is crucial for improving the performance and reliability of nanoscale devices.
Device Integration and Packaging: Patents covering device integration and packaging technologies, such as 3D integration and advanced packaging techniques, are important for enabling the development of complex systems-on-chip.
Overall, the top cited patents in micro-structural and nano-technology reflect the ongoing miniaturization of electronic devices and the pursuit of higher performance and lower power consumption. These advancements are driving the development of innovative technologies, such as artificial intelligence, machine learning, and the Internet of Things.
#nanotechnology #microelectronics #transistors #nanofabrication #materialscience #innovation #technology
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1. 6 9837414
Stacked complementary FETs featuring vertically stacked horizontal nanowires
Inventors:
Karthik Balakrishnan; Kangguo Cheng; Pouya Hashemi; Alexander Reznicek
2. 5 10263100
Buffer regions for blocking unwanted diffusion in nanosheet transistors
Inventors:
Zhenxing Bi; Kangguo Cheng; Juntao Li; Peng Xu
2. 5 10700064
Multi-threshold voltage gate-all-around field-effect transistor devices with common gates
Inventors:
Jingyun Zhang; Takashi Ando; ChoongHyun Lee
2. 5 9997519
Dual channel structures with multiple threshold voltages
Inventors:
Ruqiang Bao; Michael A. Guillorn; Vijay Narayanan
5. 4 10032867
Forming bottom isolation layer for nanosheet technology
Inventors:
Chun W. Yeung; Chen Zhang
5. 4 10510620
Work function metal patterning for N-P space between active nanostructures
Inventors:
Daniel Chanemougame; Steven R. Soss; Steven J. Bentley; Julien Frougier; Ruilong Xie
5. 4 9653289
Fabrication of nano-sheet transistors with different threshold voltages
Inventors:
Karthik Balakrishnan; Kangguo Cheng; Pouya Hashemi; Alexander Reznicek
5. 4 9947804
Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
Inventors:
Julien Frougier; Min Gyu Sung; Ruilong Xie; Chanro Park; Steven Bentley
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1. 120 9236267
Cut-mask patterning process for fin-like field effect transistor (FinFET) device
Inventors:
Ho Wei De; Kuei-Liang Lu; Ming-Feng Shieh; Ching-Yu Chang
1. 120 9520482
Method of cutting metal gate
Inventors:
Po-Chin Chang; Chih-Hao Wang; Kai-Chieh Yang; Shih-Ting Hung; Wei-Hao Wu; Gloria Wu; Inez Fu; Chia-Wei Su; Yi-Hsuan Hsiao
1. 120 9576814
Method of spacer patterning to form a target integrated circuit pattern
Inventors:
Chieh-Han Wu; Cheng-Hsiung Tsai; Chung-Ju Lee; Ming-Feng Shieh; Ru-Gun Liu; Shau-Lin Shue; Tien-I Bao
4. 81 9608116
FINFETs with wrap-around silicide and method forming the same
Inventors:
Kuo-Cheng Ching; Ching-Wei Tsai; Chi-Wen Liu; Chih-Hao Wang; Ying-Keung Leung
5. 71 9502265
Vertical gate all around (VGAA) transistors and methods of forming the same
Inventors:
Ching-Hong Jiang; Li-Ting Wang; Teng-Chun Tsai; Shih-Chiang Chen
5. 71 9536738
Vertical gate all around (VGAA) devices and methods of manufacturing the same
Inventors:
Yu-Lien Huang; Chun-Hsiung Lin; Chi-Wen Liu
7. 63 9209247
Self-aligned wrapped-around structure
Inventors:
Jean-Pierre Colinge; Kuo-Cheng Ching; Ta-Pen Guo; Carlos H. Diaz
8. 61 9412817
Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
Inventors:
Kai-Chieh Yang; Wai-Yi Lien
8. 61 9472618
Nanowire field effect transistor device having a replacement gate
Inventors:
Richard Kenneth Oxland
10. 60 9412828
Aligned gate-all-around structure
Inventors:
Kuo-Cheng Ching; Jean-Pierre Colinge; Zhiqiang Wu
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1. The Summary was generated by Gemini (https://gemini.google.com/) after a brief chat about patent citations and World Intellectual Property Organization (WIPO) fields, using a prompt generally as follows: 'Using the titles of the patents and the names of the inventors listed below, and any other relevant information you have, please write a paragraph or two explaining the major topics involved. Keep in mind we are using the cited patents as a proxy for the subject matter that was patented in 2022. Please also include relevant LinkedIn hashtags. The field in which these patents were cited is "[WIPO field]".' followed by the list of patents relating to that WIPO field. (The list of patents had been previously generated through other means.) As such, the statements in the Summary do not necessarily reflect my own views, and are NOT intended as legal, financial, or any other type of advice.
References:
Raw data from: U.S. Patent and Trademark Office. "Data Download Tables." PatentsView. Accessed September 7, 2024. https://patentsview.org/download/data-download-tables.
Please contact me (carlos@candeloro.net) for methodology, or if you know or believe information presented is not correct.
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